N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB Infineon AUIRFB8409

RS noliktavas nr.: 145-8807Ražotājs: InfineonRažotāja kods: AUIRFB8409
brand-logo
View all in MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

195 A, 409 A

Maximum Drain Source Voltage

40 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.43mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

300 nC @ 10 V

Height

9.02mm

Series

COOLiRFET

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Mexico

Produkta apraksts

COOLiRFET™ Power MOSFET, Infineon

Infineon's Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 5,60

Katrs (Tubina ir 50) (bez PVN)

€ 6,776

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB Infineon AUIRFB8409

€ 5,60

Katrs (Tubina ir 50) (bez PVN)

€ 6,776

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB Infineon AUIRFB8409
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

195 A, 409 A

Maximum Drain Source Voltage

40 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.43mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

300 nC @ 10 V

Height

9.02mm

Series

COOLiRFET

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Mexico

Produkta apraksts

COOLiRFET™ Power MOSFET, Infineon

Infineon's Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.