N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC Infineon AUIRF7316QTR
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
4.9 A
Maximum Drain Source Voltage
30 V
Series
HEXFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
23 nC @ 10 V
Transistor Material
Si
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Izcelsmes valsts
Malaysia
Produkta apraksts
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,00
Katrs (Rulli ir 4000) (bez PVN)
€ 1,21
Katrs (Rulli ir 4000) (Ieskaitot PVN)
4000
€ 1,00
Katrs (Rulli ir 4000) (bez PVN)
€ 1,21
Katrs (Rulli ir 4000) (Ieskaitot PVN)
4000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
4.9 A
Maximum Drain Source Voltage
30 V
Series
HEXFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
23 nC @ 10 V
Transistor Material
Si
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Izcelsmes valsts
Malaysia
Produkta apraksts
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products