N-Channel MOSFET, 37 A, 600 V, 3-Pin TO-247 onsemi FCH104N60

RS noliktavas nr.: 865-1271Ražotājs: onsemiRažotāja kods: FCH104N60
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

104 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

357 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.87mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

4.82mm

Transistor Material

Si

Series

SuperFET II

Minimum Operating Temperature

-55 °C

Height

20.82mm

Produkta apraksts

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor

Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Noliktavas stāvoklis patreiz nav pieejams

€ 2,45

Katrs (bez PVN)

€ 2,96

Katrs (Ieskaitot PVN)

N-Channel MOSFET, 37 A, 600 V, 3-Pin TO-247 onsemi FCH104N60
Izvēlēties iepakojuma veidu

€ 2,45

Katrs (bez PVN)

€ 2,96

Katrs (Ieskaitot PVN)

N-Channel MOSFET, 37 A, 600 V, 3-Pin TO-247 onsemi FCH104N60
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

104 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

357 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.87mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

4.82mm

Transistor Material

Si

Series

SuperFET II

Minimum Operating Temperature

-55 °C

Height

20.82mm

Produkta apraksts

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor

Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more